AO4312 36v n-channel mosfet general description p roduct summary v ds i d (at v gs =10v) 2 3a r ds(on) (at v gs =10v) < 4.5m w r ds(on) (at v gs = 4.5v) < 6.2m w 100% uis tested 100% r g tested symbol v ds the AO4312 uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and crss.in addition,switching behavior is well c ontrolled with a "schottky style" soft recovery body diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 36v drain-source voltage 36 g d s soic-8 t op view bottom view d d d d s s s g v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q j l gate-source voltage 1 8 264 mj junction and storage temperature range -55 to 150 c 50 30 a i d 23 u nits thermal characteristics parameter typ max v drain-source voltage 36 power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =70c 2 .7 v 20 12 60 101 a 45 t a =25c t a =70c c/w r q j a 25 1 5 maximum junction-to-ambient a t a =25c a valanche current c w 4 .2 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d g d s soic-8 t op view bottom view d d d d s s s g rev 0: december 2010 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4312 symbol min typ max units bv dss 36 v v ds =36v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v i d(on) 264 a 3.4 4.5 t j =125c 5.2 6.9 4.5 6.2 m w g fs 110 s v sd 0.7 1 v i s 5.5 a c iss 1560 1952 2345 pf c oss 475 685 890 pf c rss 14 50 85 pf r g 0.5 1.1 1.6 w q g (10v) 22 27.8 34 nc q g (4.5v) 10 12.7 17 nc q gs 4.3 nc q gd 4.7 nc t d(on) 7 ns t 3.1 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =18v, r =0.9 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =18v, i d =20a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance v gs =0v, v ds =18v, f=1mhz switching parameters t r 3.1 ns t d(off) 26 ns t f 4.5 ns t rr 13 17 21 ns q rr 30 38.5 47 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =18v, r l =0.9 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: december 2010 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4312 typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 0 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 1 0 12 14 16 18 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =4.5v i d =20a v g s =10v i d =20a 25 c 125 c v ds =5v v g s =4.5v v g s =10v 0 2 0 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 4 v 4.5v 10v 3.5v 40 0 2 0 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 1 0 12 14 16 18 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1 .2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =4.5v i d =20a v g s =10v i d =20a 0 3 6 9 1 2 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v g s =4.5v v g s =10v i d = 20a 25 c 125 c 0 2 0 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 4 v 4.5v 10v 3.5v rev 0: december 2010 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4312 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 4 00 800 1200 1600 2000 2400 2800 0 6 12 18 24 30 36 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =18v i d =20a 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) fi gure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r d s(on) limited t j (max) =150 c t a =25 c 100 m s 100ms 10ms 1.0 1 0.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a = 25 c t a = 150 c t a = 100 c t a = 125 c 0 2 4 6 8 1 0 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 4 00 800 1200 1600 2000 2400 2800 0 6 12 18 24 30 36 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =18v i d =20a 1 1 0 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-ambient (note f) t a = 25 c 0.0 0 .1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) fi gure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r d s(on) limited t j (max) =150 c t a =25 c 100 m s 100ms 10ms 1.0 1 0.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a = 25 c t a = 150 c t a = 100 c t a = 125 c rev 0: december 2010 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4312 typical electrical and thermal characteristics 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =60 c/w 4 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =60 c/w rev 0: december 2010 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4312 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & wa veforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & wa veforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: december 2010 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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